![]() Although MOSFETs were originally introduced in 1960, a double-gate thin-film transistor was patented in 1980, where the channel in a FET is contacted on each side by a double-gate electrode structure. History of FinFET TechnologyįinFET technology was introduced after a gradual transition from planar architecture to a vertically-oriented gate architecture. Advanced technology in development will continue to be computationally intensive, and CMOS FinFETs are likely to remain the primary transistor architecture for these advanced applications. The CMOS process currently dominates in PLDs and has helped ensure these devices use less power than they did in decades past. New products at the next technology node will have even higher density, and whether the transistor architecture will need to change again is an open question.Īs transistors have continued to scale downwards, FinFETs have proven their worth in advanced microprocessors. The current commercialized transistor node is 7 nm, with 5 nm set to begin at full scale production sometime in 2020, and both transistor nodes are based on FinFET technology. This silicon die for a GPU hides tiny transistors made from FinFET technology.Įvery time the major semiconductor manufacturers scale to a new technology node, they need to reinvent the manufacturing process, transistor architecture, or both. Just like earlier generations of transistors, FinFET is hitting its limits in terms of scaling and leakage current, and it may need to be replaced with a new architecture in the near future. ![]() The most advanced transistor that is currently commercially available is FinFET-a type of multigate device for high speed/high-density processors. ![]() Continuous scaling of transistors has forced the semiconductor industry to reinvent fundamental transistor architecture and manufacturing processes. ![]()
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